Recently, SEU Prof. Ni Zhenhua and Prof. Lyu Junpeng’s research team has made significant progress in the study of photoluminescence blinking mechanisms at two-
dimensional/three-dimensional (2D/3D) heterojunction interfaces. The research team has, for the first time, discovered and elucidated B-type blinking and its formation
mechanism at 2D/3D heterojunction interfaces. This breakthrough bridges a long-standing gap in the study of fluorescence blinking in two-dimensional materials and
provids a solid scientific foundation for advancing understanding of exciton dynamics and interface energy-regulation mechanisms in 2D materials. Related findings
were published online in Advanced Materials with the title “Origin of B-Type Blinking at 2D/3D Heterojunction Interfaces.”
As a common dynamic optical phenomenon in low-dimensional material systems, photoluminescence blinking is often regarded as a crucial window for investigating
defect states, carrier trapping/de-trapping dynamics, and interfacial energy transfer behaviors. Although blinking mechanisms in zero-dimensional (0D) and one-dimensional
(1D) materials like quantum dots and nanowires have been relatively well established, research on blinking in two-dimensional material systems remains in its infancy.
Existing studies have only observed A-type blinking, and its specific origins are not yet fully understood. Using the WS?/Si heterojunction interface as a model system and
employing multiple techniques such as fluorescence lifetime–intensity distribution (FLID), temperature-dependent photoluminescence measurements, and transient
absorption spectroscopy, the team led by Prof. Ni Zhenhua and Prof. Lyu Junpeng has, for the first time, identified and reported B-type blinking in a 2D material system for
the first time. They observed the characteristic B-type blinking feature where fluorescence intensity fluctuates significantly while the lifetime remains stable, marking the
first report of such a phenomenon in 2D materials and their heterojunction interfaces. Furthermore, this work revealed a clear anti-correlation over time between A-exciton
and localized exciton luminescence, demonstrating that B-type blinking originates from competition for occupancy between A-excitons and localized excitons. Additionally,
the study shows that F?rster resonance energy transfer occurring at the WS?/Si interface dynamically modulates the density of localized excitons, suppressing trap state
saturation and enabling the sustained blinking behavior. The exciton competition and interfacial energy transfer model proposed in this research not only offers a new physical
perspective for understanding exciton-defect interactions in 2D materials but also provides a theoretical foundation and technical reference for the future interface design,
defect control strategies, and luminescence stability optimization of 2D material optoelectronic devices. These findings are of significant importance for advancing the
application of 2D materials in high-performance optoelectronic devices, heterogeneous integrated systems, and novel light sources.
SEU is the sole corresponding institution for this achievement. Prof. Ni Zhenhua and Prof. Lyu Junpeng, along with Associate Professor Wan Dongyang from the School of
Electronic Science and Engineering and the School of Physics, SEU, are the co-corresponding authors of the paper. Doctoral student Zhou Tao from the School of Physics
and Associate Professor Wan Dongyang are the co-first authors. This research was supported by the National Key Research and Development Program of China, the
National Natural Science Foundation of China, the Jiangsu Provincial Basic Research Program for Cutting-Edge Technology, the Jiangsu Provincial Science and Technology
Major Project, as well as the Key Laboratory of Quantum Materials and Devices of the Ministry of Education at Southeast University, and Start-up Funding for new recruited
faculty members.
Source: School of Physics, SEU
Translated by: Melody Zhang
Proofread by: Gao Min
Edited by: Li Xinchang
